Fabrication of an EEPROM cell with emitter-polysilicon...

Details Fabrication of an EEPROM cell with emitter-polysilicon... Fabrication of an EEPROM cell with emitter-polysilicon...

2005-04-05

2005-04-05

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S204000, C438S217000

Reexamination Certificate

active

06875648

ABSTRACT:
An EEPROM memory cell uses an emitter polysilicon film for fabricating shallow source/drain regions to increase a breakdown voltage of the wells. The wells are fabricated to be approximately 100 nm (0.1 micrometers (μm)) in depth with a breakdown voltage of approximately 14 volts or more. A typical breakdown voltage of a well in a bipolar process is approximately 10 volts. Due to the increased breakdown voltage achieved, EEPROM memory cells can be produced along with bipolar devices on a single integrated circuit chip and fabricated on a common semiconductor fabrication line.

REFERENCES:
patent: 20040051147 (2004-03-01), Panday et al.

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