Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-09-26
2006-09-26
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S473000, C257SE21133
Reexamination Certificate
active
07112516
ABSTRACT:
One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.
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Chakravarthi Srinivasan
Chidambaram Periannan
Brady III W. James
Dolan Jennifer M
Jr. Carl Whitehead
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
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