Fabrication methods for compressive strained-silicon and...

Details Fabrication methods for compressive strained-silicon and... Fabrication methods for compressive strained-silicon and...

2007-10-16

2007-10-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S528000, C438S938000, C257SE21618

Reexamination Certificate

active

10909403

ABSTRACT:
Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.

REFERENCES:
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6803270 (2004-10-01), Dokumachi et al.

Affiliated with

Also associated with

Rating

Fabrication methods for compressive strained-silicon and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication methods for compressive strained-silicon and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication methods for compressive strained-silicon and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3830294