Fabrication method of trenched metal-oxide-semiconductor device

Details Fabrication method of trenched metal-oxide-semiconductor device Fabrication method of trenched metal-oxide-semiconductor device

2011-07-12

2011-07-12

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S294000, C257SE21410

Reexamination Certificate

active

07977192

ABSTRACT:
A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.

REFERENCES:
patent: 6489652 (2002-12-01), Jeon et al.
patent: 2007/0190728 (2007-08-01), Sreekantham et al.

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