Fabrication method of semiconductor integrated circuit device ha

Details Fabrication method of semiconductor integrated circuit device ha Fabrication method of semiconductor integrated circuit device ha

1995-09-28

1997-05-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438253, 438210, H01L 21265

Patent

active

056331819

ABSTRACT:
A fabrication method that enables to realize a semiconductor integrated circuit device having capacitors, bipolar transistors and IGFETs at a lower fabrication cost and a higher fabrication yield than the case of the conventional ones. After a first patterned conductor film having contours of first capacitor electrodes and of base electrodes is formed, a first patterned insulator film is formed on the first capacitor electrodes to produce first dielectrics A second patterned conductor film having contours of second capacitor electrodes and of gate electrodes is then formed on the first capacitor electrodes and the gate insulators. A second patterned insulator film is formed on the second capacitor electrodes to produce second dielectrics. A third patterned conductor film having contours of third capacitor electrodes and of emitter electrodes is formed on the second dielectrics, the base regions and source/drain regions. Each capacitor has a multi-layer structure of the first capacitor electrode, the first dielectric, the second capacitor electrode the second dielectric, and the third capacitor electrode. Each bipolar transistor has the base electrode contacted with the base region and the emitter electrode contacted with the emitter region.

REFERENCES:
patent: 4737472 (1988-04-01), Schaber et al.
patent: 4939099 (1990-07-01), Seacrist et al.
patent: 4962052 (1990-10-01), Asayama et al.
patent: 5118633 (1992-06-01), Sagara et al.
patent: 5273915 (1993-12-01), Hwang et al.
patent: 5457062 (1995-10-01), Keller et al.

Affiliated with

Also associated with

Rating

Fabrication method of semiconductor integrated circuit device ha does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of semiconductor integrated circuit device ha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor integrated circuit device ha will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2328631