Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2005-05-17

2005-05-17

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S030000, C430S945000

Reexamination Certificate

active

06893801

ABSTRACT:
On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

REFERENCES:
patent: 6335130 (2002-01-01), Chen et al.
patent: 6482555 (2002-11-01), Chen et al.
patent: 56-30129 (1981-03-01), None
patent: 59-22050 (1984-02-01), None
patent: 11-135402 (1999-05-01), None

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