Fabrication method of semiconductor device including insulation

Details Fabrication method of semiconductor device including insulation Fabrication method of semiconductor device including insulation

1997-12-23

2000-06-06

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438628, 438780, 438783, H01L 2100

Patent

active

060718072

ABSTRACT:
A semiconductor device including an interlayer insulation film is obtained, superior in planarization, insulation characteristics, and adhesion, suitable for microminiaturization of an element, and without inducing the problem of signal delay. In the fabrication method of this semiconductor device, an interconnection is formed on semiconductor substrate. Then, a first insulation film is formed so as to be in contact on the interconnection. Impurities are introduced into the first insulation film under a condition where the impurities arrive at least at the interconnection. As a result, the first insulation film is reduced in moisture and becomes less hygroscopic. Therefore, the insulation characteristics of the first insulation film is improved. When an SOG film superior in planarization is employed as the first insulation film, it is possible to directly form that SOG film on an underlying interconnection. In addition, the adhesion intensity between the first insulation film and the interconnection is improved. Furthermore, the distance between the pattern in the underlying interconnection can be reduced. Also, the capacitance between the interconnections is reduced.

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