Semiconductor device with a particular source/drain and gate str

Details Semiconductor device with a particular source/drain and gate str Semiconductor device with a particular source/drain and gate str

1992-12-24

1995-01-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257374, 257330, 257618, 257622, H01L 27085, H01L 27088, H01L 27092, H01L 2960

Patent

active

053789148

ABSTRACT:
There is provided a semiconductor device with very small functional elements, which can be constructed by necessary minimum components without any unnecessary surface area, thus being capable of significantly reducing the layout area and adapted for achieving a fine geometry and a high level of integration. The semiconductor device is provided with a first semiconductor area of a first conductive type (for example a p.sup.- well) and a second semiconductor area formed on or under the first semiconductor area and having a second conductive type different from the first conductive type (for example a source or drain area), in which an electrode electrically connected to the first semiconductor area is formed through the second semiconductor area, and the first and second semiconductor areas are shortcircuited by the above-mentioned electrode.

REFERENCES:
patent: 4740826 (1985-09-01), Chatterjee
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4967257 (1990-10-01), Inoue
patent: 5010386 (1991-04-01), Grover, III
patent: 5016070 (1991-05-01), Sandaresan
patent: 5021845 (1991-06-01), Hashimoto
"Integrated Electronics: Analog and Digital circuits and systems"; Millman et al; 1972 pp. 328-332.

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