Fabrication method of semiconductor device

Details Fabrication method of semiconductor device Fabrication method of semiconductor device

2009-01-29

2010-12-14

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S268000, C438S289000, C438S303000, C438S306000, C257SE21165, C257SE21206, C257SE21345, C257SE21438, C257SE21639, C257SE29051, C257SE29063, C257SE29257, C257SE29266, C257SE29309

Reexamination Certificate

active

07851316

ABSTRACT:
A fabrication method of a semiconductor device includes: forming a gate insulating film and a gate electrode on an N type well; forming first source/drain regions by implanting a first element in regions of the N type well on both sides of the gate electrode, the first element being larger than silicon and exhibiting P type conductivity; forming second source/drain regions by implanting a second element in the regions of the N type well on the both sides of the gate electrode, the second element being smaller than silicon and exhibiting P type conductivity; and forming a metal silicide layer on the source/drain regions.

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The 63rd Annual Meeting of the Japanese Society of Microscopy MG20-E-1430, with Partial English Translation.

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