Fabrication method of pixel structure

Details Fabrication method of pixel structure Fabrication method of pixel structure

2010-05-13

2010-12-21

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S359000

Reexamination Certificate

active

07855112

ABSTRACT:
A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a semiconductor pattern and a data line pattern. A gate insulation layer and a second conductive layer are formed on the substrate in sequence and patterned to form a gate pattern and a scan line pattern connected to each other. A source region, a drain region, a channel region, and a lightly doped region are formed in the semiconductor pattern. A third conductive layer formed on the substrate is patterned to form a source pattern and a drain pattern. A protective layer is formed on the substrate and patterned to form a contact window to expose the drain pattern. A pixel electrode electrically connected to the drain pattern through the contact window is formed on the protective layer.

REFERENCES:
patent: 7498210 (2009-03-01), Cheng
patent: 7763942 (2010-07-01), Chen et al.
patent: 200408874 (2004-06-01), None
patent: 1230462 (2005-04-01), None
“Office Action of Taiwan Counterpart Application” issued on Apr. 13, 2010, p. 1-p. 4.

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