Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2008-07-01
2008-07-01
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S022000, C438S493000, C257SE21131, C372S044010, C372S050121
Reexamination Certificate
active
07393710
ABSTRACT:
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
REFERENCES:
patent: 5134090 (1992-07-01), Bean et al.
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5518955 (1996-05-01), Goto et al.
patent: 5953359 (1999-09-01), Yamaguchi et al.
patent: 6171935 (2001-01-01), Nance et al.
patent: 6242326 (2001-06-01), Ro et al.
patent: 6350629 (2002-02-01), Sakata
patent: 6399404 (2002-06-01), Sakata
patent: 6680958 (2004-01-01), Nemoto
patent: 7118932 (2006-10-01), Nakamura
patent: 2005/0103259 (2005-05-01), Bang et al.
patent: 200224396 (2002-08-01), None
patent: 2002243964 (2002-08-01), None
Arakawa, Satoshi et al. “Improvement of MOCVD Growth Technique Using CBr4 ”, Furukawa Review, Apr. 2003, No. 23, pp. 76-81.
Ghosh, C. and Layman, R.L., “Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy ”, Appl. Phys. Lett., Dec. 1, 1984, vol. 45, Iss. 11, pp. 1229-1231.
Choi Seok Beom
Han Sang Heon
Kim Chang Zoo
Kim Jin Chul
Kim Tae Jun
Jr. Carl Whitehead
Kim Sun M
Samsung Electro-Mechanics Co., LTD
Volpe and Koenig P.C.
LandOfFree
Fabrication method of multi-wavelength semiconductor laser... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of multi-wavelength semiconductor laser..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of multi-wavelength semiconductor laser... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2764982