Fabrication method of metal oxide semiconductor transistor

Details Fabrication method of metal oxide semiconductor transistor Fabrication method of metal oxide semiconductor transistor

2006-07-23

2009-02-24

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S259000, C438S270000, C257SE21655, C257SE27091, C257SE27095, C257SE29201, C257SE29260

Reexamination Certificate

active

07494865

ABSTRACT:
A manufacturing method of metal oxide semiconductor transistor is provided. A substrate is provided. A source/drain extension region is formed in the substrate. A pad material layer with low dielectric constant is formed on the substrate. A trench is formed in the substrate and the pad material layer. A gate dielectric layer is formed on the surface of the substrate in the trench. A stacked gate structure is formed in the trench, wherein the top surface of a conductive layer of the stacked gate structure is higher than the surface of the pad material layer. A spacer material layer is formed conformably on the substrate. Portions of the spacer material layer and the pad material layer are removed so as to form a pair of first spacers and a pair of pad blocks. A source/drain is formed on the substrate beside the stacked gate structure.

REFERENCES:
patent: 6472302 (2002-10-01), Lee
patent: 2004/0227164 (2004-11-01), Lee et al.
patent: 2004/0259311 (2004-12-01), Kim
patent: 2005/0014338 (2005-01-01), Kim et al.
patent: 2006/0049445 (2006-03-01), Lee et al.
patent: 2007/0228473 (2007-10-01), Boyd et al.

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