Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-17
2009-02-17
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE27046
Reexamination Certificate
active
07491596
ABSTRACT:
A CMOS image sensor integrated with 1T-SRAM is provided on a substrate having a pixel array part, a logic circuit part, and a memory part by adding only one photoresist process. There are a plurality of CMOS image sensor devices in the pixel array part, a logic circuit in the logic circuit part, and a plurality of 1T-SRAMs in the memory part, and each part is isolated by a plurality of STI regions. The 1T-SRAM includes a capacitor structure and a transistor. The capacitor structure includes a well region as a bottom capacitor plate, a capacitor dielectric layer, and a top capacitor plate formed on the substrate respectively. The transistor includes a gate dielectric layer, a gate, a drain, and a source continuous with and electrically connected to the well region.
REFERENCES:
patent: 6563187 (2003-05-01), Park
patent: 6573010 (2003-06-01), Kling
patent: 6633831 (2003-10-01), Nikoonahad
patent: 6642098 (2003-11-01), Leung et al.
patent: 6673637 (2004-01-01), Wack
patent: 6806951 (2004-10-01), Wack
patent: 7098102 (2006-08-01), Lee
patent: 7148869 (2006-12-01), Chen et al.
patent: 2002/0053672 (2002-05-01), Yamazaki et al.
patent: 2004/0195600 (2004-10-01), Rhodes
patent: 2006/0256273 (2006-11-01), Yamazaki et al.
patent: 61-140168 (1986-06-01), None
patent: 1230370 (2005-04-01), None
patent: M264775 (2005-05-01), None
Hsu Winston
Le Thao P.
United Microeletronics Corp.
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