Fabrication method of CMOS device having buried implanted layers

Details Fabrication method of CMOS device having buried implanted layers Fabrication method of CMOS device having buried implanted layers

1997-06-25

1999-10-05

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438217, 438220, 438370, 438373, 438420, 438526, 438529, 148DIG70, 257369, H01L 218238

Patent

active

059637986

ABSTRACT:
A method for fabricating a CMOS device having BILLI (buried implanted layers for lateral isolation) structure capable of effectively preventing latch-up is disclosed, having the following steps. A mask pattern is formed on the semiconductor substrate of a predetermined conductivity type to expose a region where the MOS transistor, having a same conductivity type as that of the substrate, is to be formed wherein the mask pattern has a vertical boundary face having a gradual slope. A buried layer is then formed in the form of island by ion-implanting the impurity ions into the substrate to pass through the mask pattern, the buried layer having a same conductivity type as that of the substrate, and being formed to be continuous under the vertical boundary face of the mask pattern.

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patent: 5160996 (1992-11-01), Odanaka
patent: 5292671 (1994-03-01), Odanaka
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5501993 (1996-03-01), Borland

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