Fabrication method of a semiconductor device using self-aligned

Details Fabrication method of a semiconductor device using self-aligned Fabrication method of a semiconductor device using self-aligned

1999-06-16

2000-08-29

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438202, 438234, 438305, 438655, H01L 218238

Patent

active

061107719

ABSTRACT:
A semiconductor device and a fabrication method therefor improve electrostatic discharge (ESD) protecting property of an ESD protecting device in a fabrication method of a semiconductor device using a self-aligned silicide CMOS process. The semiconductor device has a silicide blocking portion which prevents a self-aligned silicified reaction by forming a gate electrode on drain and/or source of an ESD protecting device and simultaneously forming a dummy gate electrode which is separated from the gate electrode.

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patent: 5620920 (1997-04-01), Wilmsmeyer
patent: 5663082 (1997-09-01), Lee
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