Fabrication method of a semiconductor device

Details Fabrication method of a semiconductor device Fabrication method of a semiconductor device

2007-01-16

2007-01-16

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000, C438S663000, C438S933000, C257SE21008, C257S169000, C257S584000, C257S588000

Reexamination Certificate

active

10176206

ABSTRACT:
To form a wiring electrode having excellent contact function, in covering a contact hole formed in an insulting film, a film of a wiring material comprising aluminum or including aluminum as a major component is firstly formed and on top of the film, a film having an element belonging to 12 through 15 groups as a major component is formed and by carrying out a heating treatment at 400° C. for 0.5 through 2 hr in an atmosphere including hydrogen, the wiring material is provided with fluidity and firm contact is realized.

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Office Action (Application No. 8-317139), Jul. 20, 2004 with partial translation, 6 pages.

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