Fabrication method of a flash memory device

Details Fabrication method of a flash memory device Fabrication method of a flash memory device

2005-02-15

2005-02-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S223000, C438S233000

Reexamination Certificate

active

06855599

ABSTRACT:
A flash memory device includes a substrate having a trench, a deep N-type well region in the substrate, a stacked gate structure on the substrate, a first and a second spacer on a sidewall of the stacked gate, wherein the first spacer is connected with the top of the trench, a source region in the substrate under the first spacer, a drain region in the substrate under the second spacer, a P-type well region between the stacked gate and the deep N-type well region, wherein the junction between the two well regions is higher than the bottom of the trench, a doped region along the bottom and the sidewall of the trench, wherein this doped region is connected with the source region and isolates the P-type well region from the contact formed in the trench, the contact being electrically connected to the source region.

REFERENCES:
patent: 6214668 (2001-04-01), Hsu et al.

Affiliated with

Also associated with

Rating

Fabrication method of a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484991