Fabrication method for semiconductor memory device

Details Fabrication method for semiconductor memory device Fabrication method for semiconductor memory device

1996-07-26

2000-07-18

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438303, 438305, 438530, 438585, H01L 22336, H01L 213205

Patent

active

060906928

ABSTRACT:
A fabrication method for a semiconductor memory device includes the steps of forming a gate pattern on a semiconductor substrate; forming first and second sidewall spacers at sides of the gate pattern; performing an ion=implantation of a high concentration impurity using the gate pattern and the first and second sidewall spacers as a mask, thereby forming an impurity diffusion region in the semiconductor substrate; performing an ion-implantation of a transition metal on the semiconductor substrate including the gate pattern and the first and second sidewall spacers, and then forming a polysilicide and a silicide by annealing; and removing the second sidewall spacers.

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