Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-11-27
1998-12-01
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438563, 438564, H01L 21336
Patent
active
058438254
ABSTRACT:
A fabrication method for a semiconductor memory device with a non-uniformly doped channel(hereinafter, called NUDC) formed in a semiconductor substrate with a thin central portion that becomes gradually thicker toward the edges of the substrate. The method includes forming an impurity-bearing layer on a semiconductor substrate, selectively etching the impurity containing layer in a manner such that the portion of the impurity-bearing layer serving as a gate region is formed to be thin at a central portion thereof and gradually thickens as it nears the edges thereof; forming a first conductive impurity region by driving the impurity from the impurity containing layer into the semiconductor substrate, stripping the impurity containing layer, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive impurity region in the semiconductor substrate at the sides of the gate electrode.
REFERENCES:
patent: 3200019 (1965-08-01), Scott, Jr. et al.
patent: 3341381 (1967-09-01), Bergman et al.
patent: 3975220 (1976-08-01), Quinn et al.
patent: 3980507 (1976-09-01), Carley
patent: 3980508 (1976-09-01), Takamiya et al.
patent: 4175317 (1979-11-01), Aoki et al.
patent: 4830983 (1989-05-01), Thorton
patent: 5552342 (1996-09-01), Itou et al.
patent: 5605855 (1997-02-01), Chang et al.
"Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET Structures for High Current Drivability and Threshold Voltage Controllability", Okumura et al., IEEE Transactions on Electron Devices, vol. 39, No. 11, Nov. 1992, pp. 2541-2552.
Booth Richard A.
LG Semicon Co. Ltd.
Niebling John
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