Fabrication method for mosfet device

Details Fabrication method for mosfet device Fabrication method for mosfet device

1998-09-04

2000-11-14

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438306, 438369, 438370, 438372, 438373, 438376, 257219, 257220, 257221, 257285, 257327, 257335, 257345, 257404, 257408, H01L 21331, H01L 21334, H01L 21335, H01L 218236, H01L 218238

Patent

active

06146953&

ABSTRACT:
A fabrication method for a MOSFET device including the steps of forming a first insulating film on a semiconductor substrate wherein an active region and an isolated region are defined, forming a channel ion region by implanting impurity ions into the active region of the semiconductor substrate, forming a first conductive film pattern on a portion of the semiconductor substrate which corresponds to the channel ion region, forming a channel region having lower concentration than the channel ion region by implanting impurity ions in a different type from the ions in the channel ion region into a center portion of the channel ion region through the first conductive film pattern, forming a second conductive film pattern on the first conductive film pattern, forming an impurity region of low concentration in the semiconductor substrate with the first and second conductive film patterns as a mask, forming a sidewall spacer at both sides of the first and second conductive film patterns, and forming an impurity region of high concentration in the semiconductor substrate with the first and second conductive film patterns and the sidewall spacer as a mask. The present invention has advantages of improving the inferior-quality problem of semiconductor devices due to a short channel effect when a gate has a critical size and also preventing junction leakage in the junction between ion regions.

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