Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-24
2006-10-24
Doan, Theresa T. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000
Reexamination Certificate
active
07125795
ABSTRACT:
A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.
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Chiou Jing-Hung
Kuo Nai-Hao
Lee Yuh-Wen
Tsai Po-Hao
Yen Kai-Hsiang
Doan Theresa T.
Industrial Technology Research Institute
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