Fabrication method for microstructures with high aspect ratios

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S672000

Reexamination Certificate

active

07125795

ABSTRACT:
A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.

REFERENCES:
patent: 5393375 (1995-02-01), MacDonald et al.
patent: 5719073 (1998-02-01), Shaw et al.
patent: 5846849 (1998-12-01), Shaw et al.
patent: 6051866 (2000-04-01), Shaw et al.
patent: 6537849 (2003-03-01), Tsai et al.
patent: 6756673 (2004-06-01), Ahn et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication method for microstructures with high aspect ratios does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for microstructures with high aspect ratios, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for microstructures with high aspect ratios will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3643426

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.