Fabrication method for high voltage devices with at least one de

Details Fabrication method for high voltage devices with at least one de Fabrication method for high voltage devices with at least one de

1996-10-09

2000-07-18

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438268, 438529, 438530, H01L 21336, H01L 21265

Patent

active

060906693

ABSTRACT:
A fabrication method for high voltage power devices with at least one deep edge ring includes the steps of growing a lightly doped N-type epitaxial layer on a heavily doped N-type substrate, growing an oxide on the upper portion of the epitaxial layer, masking and then implanting boron ions, etching the oxide to expose regions for aluminum ion implantation, forming a layer of preimplantation oxide, masking of the body regions with a layer of photosensitive material and implanting aluminum ions, and a single thermal diffusion process forming a layer of thermal oxide on the epitaxial layer and simultaneously forming at least one deep aluminum ring and an adjacent body region doped with boron.

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