Fabrication method for controlled via hole process

Details Fabrication method for controlled via hole process Fabrication method for controlled via hole process

1984-02-06

1985-11-12

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430325, 430326, 430327, 156628, 427 38, 427 40, G03C 500, B05D 306

Patent

active

045528314

ABSTRACT:
A method for forming via holes having a rounded sidewall profile includes exposing a layer or organic positive photoresist to a formic gas plasma while the surface of the photoresist layer is bombarded with ions and electrons in a high voltage biased environment in which the photoresist layer is capacitively coupled. The photoresist layer may be exposed to UV light either before or after the formic gas plasma step.

REFERENCES:
patent: T883005 (1971-02-01), Schuller et al.
patent: 3816196 (1974-06-01), La Combe
patent: 3879597 (1975-04-01), Bersin et al.
patent: 3920483 (1975-11-01), Johnson, Jr.
patent: 4187331 (1980-02-01), Ma

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