Fabrication method for CMOS with sidewalls

Details Fabrication method for CMOS with sidewalls Fabrication method for CMOS with sidewalls

1997-11-26

1998-12-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438545, 438305, 438563, 438595, 257344, H01L 218238

Patent

active

058518665

ABSTRACT:
A semiconductor device and fabrication method therefor which improve device operation of a CMOS device. The semiconductor device and fabrication method therefor prevent the deterioration of short channel properties of a PMOS device and improve current driving capability of an NMOS device. The semiconductor device has halo impurity regions formed in either the NMOS region or the PMOS region such that a channel length of the PMOS device. Also, the source channel length of the PMOS device. Also, the source and drain regions of the PMOS device are prevented from forming deep source and drain regions, thus, preventing deterioration of the short channel properties for the PMOS device.

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