Fabrication method for a trench capacitor having an...

Details Fabrication method for a trench capacitor having an... Fabrication method for a trench capacitor having an...

2008-01-08

2008-01-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S242000, C438S243000, C438S244000, C438S248000, C438S386000, C257SE21396, C257SE21651

Reexamination Certificate

active

07316951

ABSTRACT:
The present invention provides a fabrication method for a trench capacitor having an insulation collar (10) in a silicon substrate (1), having the steps of: providing a trench (5) in the silicon substrate (1); providing the insulation collar (10) in the upper trench region as far as the top side of the silicon substrate (1); depositing a layer (12) made of a metal oxide in the trench (5); carrying out a thermal treatment for selectively reducing the layer (12), a region of the layer (12) that lies below the insulation collar (10) above the silicon substrate (1) being reduced and being converted into a first capacitor electrode layer (15) made of a corresponding metal silicide, and a region of the layer (12) that lies above the insulation collar (10) not being reduced; selectively removing the non-reduced region of the layer (12) that lies above the insulation collar (10); providing a capacitor dielectric layer (18) in the trench (5) above the first capacitor electrode layer (15); and providing a second capacitor electrode layer (20) in the trench (5) above the capacitor dielectric layer (18).

REFERENCES:
patent: 6100132 (2000-08-01), Sato et al.
patent: 6936512 (2005-08-01), Chudzik et al.
patent: 2002/0158281 (2002-10-01), Goldbach et al.
patent: 2003/0207532 (2003-11-01), Chudzik et al.

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