Fabrication method for a semiconductor device on a semiconductor

Details Fabrication method for a semiconductor device on a semiconductor Fabrication method for a semiconductor device on a semiconductor

1995-11-03

1998-02-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438149, 438549, H01L 21336

Patent

active

057190810

ABSTRACT:
A two stage threshold adjust implantation process is performed after field oxidation to avoid the effects of dopant redistribution and segregation. At any of several steps in a manufacturing process, only routine implant energy and dose adjustments are required to create a first and a second dopant profile (110, 120) that result in the reduction of edge leakage and threshold voltage sensitivity to device layer thickness of a semiconductor device on a semiconductor on insulator substrate.

REFERENCES:
patent: 4402761 (1983-09-01), Feist
patent: 4649629 (1987-03-01), Miller et al.
patent: 4845047 (1989-07-01), Holloway et al.
patent: 4948745 (1990-08-01), Pfiester et al.
patent: 5028552 (1991-07-01), Ushiku
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5091328 (1992-02-01), Miller
patent: 5185280 (1993-02-01), Houston et al.
patent: 5248627 (1993-09-01), Williams
patent: 5283200 (1994-02-01), Okamoto
patent: 5384279 (1995-01-01), Stolmeijer et al.

Affiliated with

Also associated with

Rating

Fabrication method for a semiconductor device on a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for a semiconductor device on a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a semiconductor device on a semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1783716