Fabrication method for a semiconductor device including a...

Details Fabrication method for a semiconductor device including a... Fabrication method for a semiconductor device including a...

2007-03-13

2007-03-13

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S795000, C438S197000, C438S199000, C257S369000, C257S408000, C257SE21634

Reexamination Certificate

active

10868016

ABSTRACT:
A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diffusing the impurity ions, depositing an interlayer insulator film on the isolation regions, the silicon substrate, and the gate electrodes, and heating the silicon substrate by irradiating a light having a wavelength that the light is absorbed by the silicon substrate without being absorbed by the interlayer insulator film, activating the impurity ions so as to form source and drain regions.

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Notice of Grounds for Rejection issued by the Japanese Patent Office on Oct. 31, 2006, for Japanese Patent Application No. 2003-172239, and English-language translation thereof.

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