Fabrication method for a flash memory device

Details Fabrication method for a flash memory device Fabrication method for a flash memory device

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000

Reexamination Certificate

active

06841446

ABSTRACT:
In a fabrication method of a flash memory device, a first oxide layer is formed on the substrate in the memory cell region and in the peripheral circuit region. A first conductive layer is formed and defined to form a plurality of floating gates in the memory cell region. A second oxide layer and a silicon nitride layer are sequentially formed in the memory cell region and in the peripheral circuit region. The first conductive layer, the second oxide layer and the silicon nitride layer in the peripheral circuit region are removed. A doped region is formed in the peripheral circuit region. A third oxide layer is formed in the memory cell region and in the peripheral circuit region by wet rapid thermal oxidation. Thereafter, a second conductive layer is deposited to form concurrently a control gate in the memory cell region and a gate in the peripheral circuit region.

REFERENCES:
patent: 5635416 (1997-06-01), Chen et al.
patent: 6004847 (1999-12-01), Clementi et al.
patent: 6204159 (2001-03-01), Chang et al.
patent: 6429073 (2002-08-01), Furuhata et al.

Affiliated with

Also associated with

Rating

Fabrication method for a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3430212