Fabricating strained channel epitaxial source/drain transistors

Details Fabricating strained channel epitaxial source/drain transistors Fabricating strained channel epitaxial source/drain transistors

2007-06-05

2007-06-05

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S478000, C438S482000, C438S738000

Reexamination Certificate

active

10780826

ABSTRACT:
The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain areas and crystalline films in source/drain regions. By using an etch which is selective to amorphous silicon, the amorphous material may be removed. This may avoid some problems associated with selective deposition of the doped silicon material.

REFERENCES:
patent: 5498578 (1996-03-01), Steele et al.
patent: 6011277 (2000-01-01), Yamazaki
patent: 6224713 (2001-05-01), Hembree et al.
patent: 6746967 (2004-06-01), Brask et al.
patent: 6770568 (2004-08-01), Brask
patent: 6797622 (2004-09-01), Brask et al.
patent: 6858483 (2005-02-01), Doczy et al.
patent: 6946350 (2005-09-01), Lindert et al.
patent: 2002/0034864 (2002-03-01), Mizushima et al.
patent: 2004/0097047 (2004-05-01), Natzie et al.
patent: 2005/0111806 (2005-05-01), Brask et al.
Stanley Wolf Silicon Processing for the VSLI Era vol. 1 Lattice Press 1986 (pp. 142, 169, and 179).

Affiliated with

Also associated with

Rating

Fabricating strained channel epitaxial source/drain transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating strained channel epitaxial source/drain transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating strained channel epitaxial source/drain transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3858869