Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2010-01-08
2011-12-20
Dang, Phuc (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S479000, C257S052000, C257S059000
Reexamination Certificate
active
08080451
ABSTRACT:
Solutions for fabricating a semiconductor structure. One embodiment includes a method for fabricating a semiconductor structure, the method including: forming a first dielectric structure on a substrate, the first dielectric structure including silicon nitride (Si3N4); forming a second dielectric structure in proximity to the first dielectric structure; and growing a non-epitaxial thin film from a surface of the first dielectric structure; wherein the growing includes using a combination of precursor, carrier and etchant with a ratio among the precursor, carrier, and etchant being adjusted for selective growth of the thin film on the surface, and wherein the thin film includes one selected from a group consisting of: a monocrystalline material, an amorphous material, a polycrystalline material and a combination thereof.
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Adam Thomas N.
Chakravarti Ashima B.
Harley Eric C. T.
Holt Judson R.
Cai Yuanmin
Dang Phuc
Hoffman Warnick LLC
International Business Machines - Corporation
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