Fabricating method of stacked type capacitor

Details Fabricating method of stacked type capacitor Fabricating method of stacked type capacitor

1998-03-31

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438397, H01L 218242

Patent

active

060636602

ABSTRACT:
A fabricating method and a structure of a stacked-type capacitor is provided comprising forming a first dielectric layer having a first via on a semiconductor substrate. A first conductive layer is filled into the first via. Then, insulating layers and dielectric layers are formed. A photolithography step is used to form a second dendriform via in the insulating layers and the dielectric layers. A second conductive layer is filled in the second dendriform via. The insulating layers and conductive layers are removed to form a dendriform lower electrode. The dendriform electrode provides a larger surface area to increase capacitance. Further, a polysilicon layer of hemispherical grains is formed to increase the surface area of the lower electrode.

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