Fabricating method of semiconductor device

Details Fabricating method of semiconductor device Fabricating method of semiconductor device

2007-10-22

2010-06-08

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S595000, C257SE21640

Reexamination Certificate

active

07732283

ABSTRACT:
A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can include a nitride layer and an oxide layer. An etch stop layer can be provided between the gate structures, and the oxide layer can be removed from the spacers. A first oxide layer formed below the nitride layer can be protected from being etched away during removal of the oxide layer from the spacers by the etch stop layer. The etch stop layer and the first oxide layer can be removed, and an interlayer dielectric layer can be deposited.

REFERENCES:
patent: 5972764 (1999-10-01), Huang et al.
patent: 6265274 (2001-07-01), Huang et al.
patent: 6346468 (2002-02-01), Pradeep et al.
patent: 7064071 (2006-06-01), Schwan
patent: 7217626 (2007-05-01), Bu et al.

Affiliated with

Also associated with

Rating

Fabricating method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4178421