Fabricating method of semiconductor device

Details Fabricating method of semiconductor device Fabricating method of semiconductor device

2006-04-07

2009-02-03

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27064

Reexamination Certificate

active

07485517

ABSTRACT:
A method for fabricating a semiconductor device is provided. First, a substrate is provided, and a first-type MOS (metallic oxide semiconductor) transistor, an input/output (I/O) second-type MOS transistor, and a core second-type MOS transistor are formed on the substrate. Then, a first stress layer is formed to overlay the substrate, the first-type MOS transistor, the I/O second-type MOS transistor, and the core second-type MOS transistor. Then, at least the first stress layer on the core second-type MOS transistor is removed to reserve at least the first stress layer on the first-type MOS transistor. Finally, a second stress layer is formed on the core second-type MOS transistor.

REFERENCES:
patent: 7101744 (2006-09-01), Dyer et al.
patent: 2005/0218455 (2005-10-01), Maeda et al.
patent: 2006/0183339 (2006-08-01), Ravi et al.
patent: 2006/0226490 (2006-10-01), Burnett et al.
patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 1449585 (2003-10-01), None

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