Fabricating method of non-volatile memory

Details Fabricating method of non-volatile memory Fabricating method of non-volatile memory

2008-07-29

2008-07-29

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S316000, C257SE29129

Reexamination Certificate

active

11306384

ABSTRACT:
A method for fabricating a non-volatile memory is described. A substrate having isolation structures is provided. These isolation structures protrude from the substrate, and a first mask layer is formed on the substrate between the isolation structures. A second mask layer is formed on the substrate. The second and the first mask layers are patterned to form openings exposing part of the surface of the substrate and the isolation structures. A tunneling dielectric layer and a first conductive layer are formed on the substrate. The first conductive layer is filled in the opening, and is divided into blocks by the isolation structures, the second mask layer, and the first mask layer. An inter-gate dielectric layer is formed on the substrate. A second conductive layer is formed on the substrate to fill up the openings. Doped regions are formed in the substrate on both sides of the second conductive layer.

REFERENCES:
patent: 6133601 (2000-10-01), Watanabe
patent: 2003/0193064 (2003-10-01), Wu
patent: 2006/0081906 (2006-04-01), Jeong

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