Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-25
2009-10-13
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07601587
ABSTRACT:
A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.
REFERENCES:
patent: 2007/0187727 (2007-08-01), Ting et al.
patent: 2008/0128831 (2008-06-01), Chou et al.
patent: 2008/0296631 (2008-12-01), Chen et al.
patent: 1445838 (2003-10-01), None
Chou Pei-Yu
Hung Wen-Han
Yang Min-Chieh
Garber Charles D.
Jianq Chyun IP Office
Stevenson André C
United Microelectronics Corp.
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