Fabricating method of an ultra-fast pseudo-dynamic nonvolatile f

Details Fabricating method of an ultra-fast pseudo-dynamic nonvolatile f Fabricating method of an ultra-fast pseudo-dynamic nonvolatile f

1998-04-20

2000-03-21

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, H01L 218247

Patent

active

060402172

ABSTRACT:
A fabricating method of an ultra-fast pseudo-dynamic nonvolatile flash memory comprises a capacitor coupled to a local bit line. The formation of the capacitor is the characteristic of the fabricating method. In the memory structure fabricated according to the invention, the capacitor is used for the purpose of charge and discharge. The memory is operated as a normal dynamic random access memory during charging, while it is operated as a flash memory during discharging. Thus, the access speed of the memory is faster than a conventional flash memory.

REFERENCES:
patent: 5057448 (1991-10-01), Kuroda
patent: 5591658 (1997-01-01), Cacharelis
patent: 5656544 (1997-08-01), Bergendahl et al.
patent: 5872034 (1999-02-01), Schlais et al.
patent: 5908311 (1999-06-01), Chi et al.
patent: 5930613 (1999-07-01), Schlais et al.

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