Fabricating method of an non-volatile memory

Details Fabricating method of an non-volatile memory Fabricating method of an non-volatile memory

2006-07-07

2008-12-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S564000, C257SE21619, C257SE21634, C257SE21151

Reexamination Certificate

active

07462537

ABSTRACT:
A method of fabricating a non-volatile memory is provided. A substrate having a trench therein for forming a trench device is provided. Then, a doped metal silicide layer is formed on the substrate in the trench. A heating process is performed to form a source/drain area in the substrate under the doped metal silicide layer. Thereafter, a first conductive layer is formed on the doped metal silicide layer to fill up the trench.

REFERENCES:
patent: 4839309 (1989-06-01), Easter et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 7056792 (2006-06-01), Lin
patent: 7202139 (2007-04-01), Yeo et al.
patent: 7208376 (2007-04-01), Chen et al.

Affiliated with

Also associated with

Rating

Fabricating method of an non-volatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating method of an non-volatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating method of an non-volatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4040982