Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-02-17
2011-11-01
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S462000, C438S469000, C438S430000, C257S508000, C257SE21546, C257SE23002
Reexamination Certificate
active
08048761
ABSTRACT:
An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system extending from the stack layer to a predetermined point below the surface of the substrate. A crack stop trench is formed in the substrate and filled with material having good crack resistance to anchor the stack layer to the substrate.
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Chan Kai Chong
Yeo Alfred
GLOBALFOUNDRIES Singapore Pte. Ltd.
McCutcheon Robert D.
Smith Matthew
Swanson Walter H
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