Fabricating a floating gate with field enhancement feature self-

Details Fabricating a floating gate with field enhancement feature self- Fabricating a floating gate with field enhancement feature self-

1998-05-26

2000-05-30

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438593, H01L 218247

Patent

active

060690402

ABSTRACT:
Floating gates with field enhancement features are produced by a technique that makes possible structures smaller than the lithographically defined image. The floating gates produced having sharp tips for source-side injection flash memory cells. Moreover, the process provides an insulator cap over the floating gate that is self-aligned.

REFERENCES:
patent: 5767005 (1998-06-01), Doan et al.
patent: 5854501 (1998-12-01), Kao
patent: 5907775 (1999-05-01), Tseng
patent: 6008112 (1999-12-01), Acocella et al.

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