Extreme low-K dielectric film scheme for advanced interconnects

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reissue Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S758000, C257SE21151

Reissue Patent

active

RE042514

ABSTRACT:
An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.

REFERENCES:
patent: 6548892 (2003-04-01), Steiner et al.
patent: 6875694 (2005-04-01), Ngo et al.
patent: 7456490 (2008-11-01), Kloster et al.
patent: 7588995 (2009-09-01), Yu et al.
patent: 2006/0226548 (2006-10-01), Mandal
patent: 2006/0240652 (2006-10-01), Mandal

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Extreme low-K dielectric film scheme for advanced interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Extreme low-K dielectric film scheme for advanced interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extreme low-K dielectric film scheme for advanced interconnects will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2699126

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.