Extreme low-k dielectric film scheme for advanced interconnect

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S758000, C257SE21151

Reexamination Certificate

active

07626245

ABSTRACT:
An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.

REFERENCES:
patent: 6548892 (2003-04-01), Steiner et al.
patent: 6875694 (2005-04-01), Ngo et al.
patent: 7456490 (2008-11-01), Kloster et al.
patent: 7588995 (2009-09-01), Yu et al.
patent: 2006/0226548 (2006-10-01), Mandal
patent: 2006/0240652 (2006-10-01), Mandal

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