Extended raised source/drain structure for enhanced contact...

Details Extended raised source/drain structure for enhanced contact... Extended raised source/drain structure for enhanced contact...

2006-02-21

2009-02-10

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000

Reexamination Certificate

active

07488660

ABSTRACT:
A semiconductor device comprises a gate electrode stack having sidewalls and a top surface with a gate dielectric layer and the gate electrode, and LDD/LDS regions in the substrate aligned with the stack. Conformal L-shaped etch-stop layers with a thickness from about 50 Å to about 200 Å are formed with a vertical leg on the sidewalls of the stack and a horizontal leg reaching over the LDD/LDS regions next to the stack. RSD regions are formed in contact with the substrate aside from the etch-stop layers. The RSD regions cover the horizontal leg of the etch-stop layer and cover at least a portion of the vertical leg of the etch-stop layer on the sidewall of the gate electrode.

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