Exposure method for correcting line width variation in a...

Details Exposure method for correcting line width variation in a... Exposure method for correcting line width variation in a...

2007-02-27

2007-02-27

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C430S030000

Reexamination Certificate

active

10873242

ABSTRACT:
A method for correcting line width variation occurring during a development process in fabricating a photomask and a recording medium in which the exposure method is recorded is provided, wherein pattern line width variation occurring in a development process with respect to a desirable pattern is estimated, and a corrective exposure is performed using a dose or bias of an electron beam corresponding to the estimated pattern line width variation. Accordingly, pattern line width variation occurring during a development process can be reduced.

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