X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1994-02-17
1997-03-11
Church, Craig E.
X-ray or gamma ray systems or devices
Specific application
Lithography
2504921, G21K 500
Patent
active
056109652
ABSTRACT:
A method of exposing a wafer to exposure energy such as ultraviolet rays or X-rays through a mask to transfer a pattern of the mask onto the wafer, for example. The temperature of the mask and/or the wafer increases during the exposure operation by absorption of the exposure energy. While the wafer is being exposed, the temperature of the mask and/or the wafer is detected. If the temperature is going to exceed an exposable temperature range determined on the basis of the line width of the pattern to be transferred, the exposure operation is interrupted. Then, the heat accumulated in the mask and/or the wafer is removed. Thereafter, the exposure operation is resumed. This is repeated until the predetermined or required amount of exposure is reached, for one shot. By this, thermal expansion of the mask and the wafer during the exposure operation is prevented to assure the precision of the pattern transfer.
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patent: 4852133 (1989-07-01), Ikeda et al.
patent: 4969168 (1990-11-01), Sakamoto et al.
patent: 5171965 (1992-12-01), Suzuki et al.
Mori Makiko
Ozawa Kunitaka
Sakamoto Eiji
Shimoda Isamu
Uda Koji
Canon Kabushiki Kaisha
Church Craig E.
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