Evaporated LaA1O3 films for gate dielectrics

Details Evaporated LaA1O3 films for gate dielectrics Evaporated LaA1O3 films for gate dielectrics

2005-05-17

2005-05-17

Wille, Douglas (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S287000

Reexamination Certificate

active

06893984

ABSTRACT:
A gate dielectric containing LaAlO3and method of fabricating a gate dielectric contained LaAlO3produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO3gate dielectric is formed by evaporating Al2O3at a given rate, evaporating La2O3at another rate, and controlling the two rates to provide an amorphous film containing LaAlO3on a transistor body region. The evaporation deposition of the LaAlO3film is performed using two electron guns to evaporate dry pellets of Al2O3and La2O3. The two rates for evaporating the materials are selectively chosen to provide a dielectric film composition having a predetermined dielectric constant ranging from the dielectric constant of an Al2O3film to the dielectric constant of a La2O3film. In addition to forming a LaAlO3gate dielectric for a transistor, memory devices, and information handling devices such as computers include elements having a LaAlO3gate electric with a thin equivalent oxide thickness.

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