Evaluating a multi-layered structure for voids

Details Evaluating a multi-layered structure for voids Evaluating a multi-layered structure for voids

2006-06-20

2006-06-20

Toatley, Gregory J. (Department: 2877)

Optics: measuring and testing

Inspection of flaws or impurities

Transparent or translucent material

C356S237400, C356S237500, C356S630000

Reexamination Certificate

active

07064822

ABSTRACT:
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. One of the two measurements is of resistance per unit length. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

REFERENCES:
patent: 3462602 (1969-08-01), Apple
patent: 4255971 (1981-03-01), Rosencwaig
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4521118 (1985-06-01), Rosencwaig
patent: 4522510 (1985-06-01), Rosencwaig et al.
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4632561 (1986-12-01), Rosencwaig et al.
patent: 4634290 (1987-01-01), Rosencwaig
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4679946 (1987-07-01), Rosencwaig et al.
patent: 4750822 (1988-06-01), Rosencwaig et al.
patent: 4795260 (1989-01-01), Schuur et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5149978 (1992-09-01), Opsal et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5228776 (1993-07-01), Smith et al.
patent: 5377006 (1994-12-01), Nakata
patent: 5436463 (1995-07-01), Rostoker
patent: 5574562 (1996-11-01), Fishman et al.
patent: 5706094 (1998-01-01), Maris
patent: 5877860 (1999-03-01), Borden
patent: 5883518 (1999-03-01), Borden
patent: 5966019 (1999-10-01), Borden
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6020964 (2000-02-01), Loopstra et al.
patent: 6040936 (2000-03-01), Kim et al.
patent: 6049220 (2000-04-01), Borden et al.
patent: 6054868 (2000-04-01), Borden et al.
patent: 6154280 (2000-11-01), Borden
patent: 6169601 (2001-01-01), Eremin et al.
patent: 6243199 (2001-06-01), Hansen et al.
patent: 6268916 (2001-07-01), Lee et al.
patent: 6323951 (2001-11-01), Borden et al.
patent: 6327035 (2001-12-01), Li et al.
patent: 6400454 (2002-06-01), Noguchi et al.
patent: 6426644 (2002-07-01), Borden et al.
patent: 6483594 (2002-11-01), Borden et al.
patent: 6489801 (2002-12-01), Borden et al.
patent: 6525818 (2003-02-01), Yin et al.
patent: 6559942 (2003-05-01), Sui et al.
patent: 6563578 (2003-05-01), Halliyal et al.
patent: 6694284 (2004-02-01), Nikoonahad et al.
patent: 6812047 (2004-11-01), Borden et al.
patent: 6911349 (2005-06-01), Li et al.
patent: 6958814 (2005-10-01), Borden et al.
patent: 2001/0015937 (2001-08-01), Yamaguchi et al.
patent: 2002/0167326 (2002-11-01), Borden et al.
patent: 2003/0165178 (2003-09-01), Borden et al.
patent: 2004/0218180 (2004-11-01), Rosencwaig et al.
patent: 0 718 595 (1996-06-01), None
patent: 05006929 (1993-01-01), None
patent: 2000-9443 (2000-01-01), None
patent: WO 97/08536 (1997-03-01), None
patent: WO 99/64880 (1999-12-01), None
J. Kolzer et al. “Thermal Imaging and Measurement Techniques for Electronic Materials and Devices” Microelectronic Engineering, vol. 31, 1996 (month unknown) pp. 251-.
C. Martinsons et al. “Recent progress in the measurement of thermal properties of hard coatings” Thin Solid Films, vol. 317, Apr. 1998, 455-457.
S. Wolf and R. N. Tauber, “Silicon Processing For The VLSI Era”, vol. 1, 1986, pp. 388-399.
Yaozhi Hu and Sing Pin Tay, “Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process”, J. Vac. Sci. Technology, American Vacuum Soc.
Dieter K. Schroder “Semiconductor Material And Device Characterization”, John Wiley & Sons, Inc. 1990, pp. 538-561, and 458-466.
Bristow, Thomas C. and Dag Lindquist, “Surface Measurements With A Non-Contact Nomarski-Profiling Instrument”, Interferometric Metrology, SPIE vol. 816, Aug. 1987.
Charles Kittel, “Introduction to Solid State Physics”, Fourth Edition, John Wiley & Sons, published prior to Mar. 1, 2002, pp. 262-264.
Rolf E. Hummel, “Electronic Properties of Materials, An Introduction For Engineers”, published prior to Mar. 1, 2002, pp. 137-145.
H.S. Carslaw and J.C. Jaeger, “Conduction of Heat In Solids”, Second Edition, published prior to Mar. 1, 2002, pp. 64-66.
Rosencwaig, “Thermal Wave Characterization and Inspection of Semiconductor Materials and Devices”, Chapter 5 (pp. 97-135), of Photoacoustic and Thermal Wave Phenomena in Semiconductors, North-Holland, 1987.
J. Opsal, “High Resolution Thermal Wave Measurements and Imaging of Defects and Damage in Electronic Materials” Photoacoustic and Photothermal Phenomena II, Springer Series in Optical Sciences, vol. 62, Springer Verlag Berlin, Heidelberg, 1990.
A. Rosencwaig, “Thermal Wave Measurement of Thin-Film Thickness”, 1986 American Chemical Society, pp. 182-191.
A. Rosencwaig et al., “Thin-Film Thickness Measurements with Thermal Waves”, Journal De Physique, Oct. 1983, pp. C6-483—C6-489.
P. Alpern and S. Wurm, “Modulated Optical Reflectance Measurements on Bulk Metals and Thin Metallic Layers”, J. Appl. Phys. 66(4), Aug. 15, 1989, pp. 1676-1679.
J. Opsal, “The Application of Thermal Wave Technology to Thickness and Grain Size Monitoring of Aluminum Films”, SPIE vol. 1596 Metalization Performance and Reliability Issues for VLSI and ULSI (1991), pp. 120-131.
L. Chen et al., “Thermal Wave Studies of Thin Metal Films Using the Meta-Probe-A New Generation Photothermal System” 25th Review of Progress in QNDE, Snowbird, UT Jul. 19-24, 1998, pp. 1-12.
S. Ameri et al., “Photo-Displacement Imaging”, Mar. 30, 1981, pp. 337-338.
A. Rosenwaig, “Process Control In IC Manufacturing With Thermal Waves”, Review of Progress in Quantitative Nondestructive Evaluation, vol. 9, 1990, pp. 2031-2037.
K. Farnaam, “Measurement of Aluminum Alloy Grain Size on Product Wafers and its Correlation to Device Reliability”, 1990 WLR Final Report, pp. 97-106.
B.C. Forget et al., “High Resolution AC Temperature Field Imaging”, Electronic Letters Sep. 25, 1997, vol. 33 No. 20, pp. 1688-1689.
C. Paddock et al., “Transient Thermoreflectance from Metal Films”, May 1986 vol. 11, No. 5 Optical Letters, pp. 273-275.
C. Paddock et al., “Transient Thermoreflectance from Metal Films”, J. Appl. Phys. 60(1), Jul. 1, 1986, pp. 285-290.
Per-Eric Nordail et al. “Photothermal Radiometry”, Physica Scripts, vol. 20, 659-662, 1979.
A. Rosenwaig, “Thermal Wave Monitoring and Imaging of Electronic Materials and Devices”, pp. 73-109 (believed to be prior to Mar. 1, 2002).
A. Rosenwaig, “Applications of Thermal-Wave Physics to Microelectronics”, VLSI Electronics, Microsturcture Science vol. 9, pp. 227-288 (believed to be prior to Mar. 1.
W. Lee Smith et al., “Voids, Notches and Micros-cracks in A1 Metallization Detected by Nondestructive Thermal Wave Imaging”, Jun. 23m, 1989, pp. 211-221.
W. Lee Smith et al., Imaging of Subsurface Defects in ULSI Metalization (AI Voids SI Precipitates, Silicide Instability) and SI Substrates (D Defects), Technical Proceedings Semicon/Japan 1992, Nippon Convention Center, Japan pp. 238-246.
W. Lee Smith, “Nondestructive Thermal Wave Imaging of Voids & Microcracks in Aluminum Metallization”, 1989 WLR Final Report, pp. 55-68.
W. Lee Smith, “Direct Measurement of Stress-Induced Void Growth by Thermal Wave Modulated Optical Refectance Imaging”, 1991 IEEE/IRPS, pp. 200-208.
W. Lee Smith, “Evaluating Voids and Microcracks in A1 Metalization”, Semiconductor International, Jan. 1990, pp. 232-237.
J. A. Batista et al., “Biased MOS-FET and Polycrystalline Silicon Tracks Investigated by Photothermal Reflectance Microscopy”, pp. 468-469.
L. Chen et al., “Meta-Probe: A New Generation Photothermal System For Thin Metal Films Characterization” (believed to be prior to Mar.

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