Evaluating a multi-layered structure for voids

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

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C356S237500

Reexamination Certificate

active

07088444

ABSTRACT:
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

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