Ethane implantation with a dilution gas

Details Ethane implantation with a dilution gas Ethane implantation with a dilution gas

2011-08-23

2011-08-23

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S282000, C250S42300F

Reexamination Certificate

active

08003957

ABSTRACT:
To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, as they contain only non-carbon atoms. These species must be eliminated before the implantation, leaving only carbon-based species. However, the current of the desired species may be low, thereby requiring extra energy or time to implant the desired dosage of carbon into a substrate. This can be improved through the use of a second gas. This second gas is used to dilute the primary carbon-containing gas to be ionized in the ion chamber. By incorporating this dilution gas, more of the resulting ionized species are beneficial to the carbon implantation.

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