Etching technique to planarize a multi-layer structure

Details Etching technique to planarize a multi-layer structure Etching technique to planarize a multi-layer structure

2007-08-21

2007-08-21

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S718000, C438S719000, C438S738000

Reexamination Certificate

active

11240708

ABSTRACT:
The present invention is directed to a method of etching a multi-layer structure formed from a layer of a first material and a layer of a second material differing from the first material to obtain a desired degree of planarization. To that end, the method includes creating a first set of process conditions to etch the first material, generating a second set of process conditions to etch the second material; and establishing an additional set of process conditions to concurrently etch the first and second materials at substantially the same etch rate.

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