Etching solution, etched article and method for etched article

Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate

Reexamination Certificate

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C216S106000, C216S108000, C252S079100, C252S079200

Reexamination Certificate

active

09856358

ABSTRACT:
An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.

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