Etching solution, etched article and method for etched article

Details Etching solution, etched article and method for etched article Etching solution, etched article and method for etched article

2008-07-29

2008-07-29

Tran, Binh X (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

C216S106000, C216S108000, C252S079100, C252S079200

Reexamination Certificate

active

09856358

ABSTRACT:
An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.

REFERENCES:
patent: 3518135 (1970-06-01), Cerniglia et al.
patent: 3968565 (1976-07-01), Bertens et al.
patent: 3977925 (1976-08-01), Schwabe
patent: 3997381 (1976-12-01), Wanlass
patent: 4052253 (1977-10-01), Kingzett
patent: 4273826 (1981-06-01), McCollister et al.
patent: 4395304 (1983-07-01), Kern et al.
patent: 5112437 (1992-05-01), Watanabe et al.
patent: 5294568 (1994-03-01), McNeilly et al.
patent: 5439553 (1995-08-01), Grant et al.
patent: 5571375 (1996-11-01), Izumi et al.
patent: 5658417 (1997-08-01), Watanabe et al.
patent: 5716535 (1998-02-01), Lee et al.
patent: 5783495 (1998-07-01), Li et al.
patent: 5824601 (1998-10-01), Dao et al.
patent: 0 669 646 (1995-08-01), None
patent: 0 887 323 (1998-12-01), None
patent: 1150342 (2001-10-01), None
patent: 1168424 (2002-01-01), None
patent: 52-56869 (1977-05-01), None
patent: 1977-056869 (1977-05-01), None
patent: 58-204540 (1983-11-01), None
patent: 1983-204540 (1983-11-01), None
patent: 60-64437 (1985-04-01), None
patent: 11-74249 (1999-03-01), None
patent: WO 94/27314 (1994-11-01), None

Affiliated with

Also associated with

Rating

Etching solution, etched article and method for etched article does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching solution, etched article and method for etched article, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching solution, etched article and method for etched article will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3933957